BGD814 데이터 시트보기 (PDF) - NXP Semiconductors.
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BGD814 Datasheet PDF : 10 Pages
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NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
BGD814
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN
1
2, 3
5
7, 8
9
DESCRIPTION
input
common
+VB
common
output
APPLICATIONS
CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
123 5 789
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
with a voltage supply of 24 V (DC).
Side view
MSA319
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
Gp
power gain
Itot
total current consumption (DC)
CONDITIONS
f = 45 MHz
f = 870 MHz
VB = 24 V
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VB
Vi
Tstg
Tmb
PARAMETER
supply voltage
RF input voltage
storage temperature
operating mounting base temperature
MIN.
19.7
20.5
380
MAX.
20.3
21.5
410
UNIT
dB
dB
mA
MIN.
40
20
MAX.
30
70
+100
+100
UNIT
V
dBmV
C
C
2001 Nov 01
2
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