BGD814 데이터 시트보기 (PDF) - NXP Semiconductors.
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BGD814 Datasheet PDF : 10 Pages
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NXP Semiconductors
860 MHz, 20 dB gain power doubler
amplifier
Product specification
BGD814
handboo−k,4h0alfpage
CTB
(dB)
−50
−60
−70
MLD348
52
(1)
Vo
(dBmV)
48
−40
handbook, halfpage
Xmod
(dB)
−50
(2)
44
−60
(3)
(4)
40
−70
MLD349
52
(1)
Vo
(dBmV)
48
(2)
(3)
44
(4)
40
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
−80
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.6 Cross modulation as a function of frequency
under tilted conditions.
handboo−k,5h0alfpage
CSO
(dB)
−60
MLD350
52
(1)
Vo
(dBmV)
(2)
48
−70
(3)
44
−80
(4)
40
−90
0
36
200
400
600
800 1000
f (MHz)
ZS = ZL = 75 ; VB = 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 .
(3) Typ.
(4) Typ. 3 .
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
2001 Nov 01
6
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