DAP202UM 데이터 시트보기 (PDF) - ROHM Semiconductor

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DAP202UM

Switching Diode

ROHM Semiconductor 

Data Sheet

Switching Diode

DAP202UM

Applications

High speed switching

Features

1)Small mold, flat lead type. (UMD3F)

2)High reliability

Dimensions (Unit : mm)

2.0±0.1

0.32

+0.1

-0.05

各 リード とも

同 寸法

Each lead has

same dimensions

(3)

0.9±0.1

　　Land size figure (Unit : mm)

0～0.1

Construction

Silicon epitaxial planer

(1)

(2)

0.65

0.65

1.3±0.1

0.13±0.05

Structure

ROHM : UMD3F

dot (year week factory)

Taping dimensions (Unit : mm)

φ1.55±0.05 2.0±0.05

4.0±0.1

0.3±0.1

4.0±0.1

φ0.5±0.05

2.2±0.08

1.15±0.1

Absolute maximum ratings (Ta=25°C)

Parameter

Symbol

Reverse voltage (repetitive)

VRM

Reverse voltage (DC)

VR

Forward voltage(repetitive peak)

IFM

Average rectified forward current

Io

Surge current(t=1s)

Power dissipation

Isurge

Pd

Junction temperature

Tj

Storage temperature

Tstg

Rated in slash put frequency

f

Limits

80

80

300

100

4

200

150

- 55 to +150

100

Unit

V

V

mA

mA

A

mW/Total

°C

°C

MHz

Electrical characteristics (Ta=25°C)

Parameter

Symbol Min.

Typ.

Max.

Forward voltage

VF

-

Reverse current

IR

-

Capacitance between terminals

Ct

-

-

1.2

-

0.1

-

3.5

Reverse recovery time

trr

-

-

4.0

Unit

Conditions

V

IF=100mA

μA

VR=70V

pF

VR=6V , f=1MHz

ns

VR=6V , IF=5mA , RL=50Ω

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© 2011 ROHM Co., Ltd. All rights reserved.

1/3

2011.09 - Rev.A

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