MPSA55L-T92-B 데이터 시트보기 (PDF) - Unisonic Technologies
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MPSA55L-T92-B Datasheet PDF : 3 Pages
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MPSA05/55
AMPLIFIER TRANSISTOR
ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
4
V
Collector current - Continuous
IC
Total device dissipation, @TA=25℃
Derate above 25℃
PD
500
mA
625
mW
5
mW/℃
Total device dissipation, @TC=25℃
Derate above 25℃
PD
1500
12
mW
mW/℃
Junction Temperature
Storage Temperature
TJ
TSTG
125
℃
-40 ~ +150
℃
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
THERMAL DATA
PARAMETER
SYMBOL
RATINGS
Thermal resistance, junction to ambient (Note)
RθJA
200
Thermal resistance, junction to case
RθJC
83.3
Note: RθJA is measured with the device soldered into a typical printed circuit board.
UNIT
℃/W
℃/W
ELECTRICAL CHARACTERISTICS (Ta=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN
OFF CHARACTERISTICS
Collector-emitter breakdown voltage
(note 1)
V(BR)CEO IC=1.0mA, IB=0
60
Emitter-base breakdown voltage
V(BR)EBO IE=100μA, Ic=0
4
Collector cutoff current
ICES VCE=60V, IB=0
Collector cutoff current
ICBO VCB=60V, IE=0
ON CHARACTERISTICS
DC current gain
hFE
IC=10mA, VCE=1V
IC=100mA, VCE=1V
100
100
Collector-emitter saturation voltage VCE(SAT) IC=100mA, IB=10mA
Base-emitter on voltage
VBE(ON) IC=100mA, VCE=1V
SMALL-SIGNAL CHARACTERISTICS
Current gain bandwidth MPSA05
product (note 2)
MPSA55
fT
IC=10mA, VCE=2V, f=100MHz
IC=100mA, VCE=1V, f=100MHz
100
50
Note 1. Pulse test: PW<=300μs, Duty Cycle<=2%
2. fT is defined as the frequency at which IhfeI extrapolates to unity.
TYP
MAX UNIT
V
V
0.1 μA
0.1 μA
0.25 V
1.2 V
MHz
MHz
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R201-034.Ba
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