BT139X-500F 데이터 시트보기 (PDF) - Kersemi Electronic Co., Ltd.
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BT139X-500F Datasheet PDF : 5 Pages
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BT139X series
ISOLATION LIMITING VALUE & CHARACTERISTIC
Ths = 25 ˚C unless otherwise specified
SYMBOL PARAMETER
CONDITIONS
Visol
R.M.S. isolation voltage from all f = 50-60 Hz; sinusoidal
three terminals to external
waveform;
heatsink
R.H. ≤ 65% ; clean and dustfree
Cisol
Capacitance from T2 to external f = 1 MHz
heatsink
MIN. TYP. MAX. UNIT
-
2500 V
-
10
-
pF
THERMAL RESISTANCES
SYMBOL PARAMETER
Rth j-hs
Thermal resistance
junction to heatsink
Rth j-a
Thermal resistance
junction to ambient
CONDITIONS
full or half cycle
with heatsink compound
without heatsink compound
in free air
MIN. TYP. MAX. UNIT
-
-
4.0 K/W
-
-
5.5 K/W
-
55
- K/W
STATIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN. TYP.
MAX.
UNIT
BT139X-
... ...F ...G
IGT
Gate trigger current
VD = 12 V; IT = 0.1 A
T2+ G+
-
5
35 25 50 mA
T2+ G-
-
8
35 25 50 mA
T2- G-
-
10 35 25 50 mA
T2- G+
-
22 70 70 100 mA
IL
Latching current
VD = 12 V; IGT = 0.1 A
T2+ G+
-
7
40 40 60 mA
T2+ G-
-
20 60 60 90 mA
T2- G-
-
8
40 40 60 mA
T2- G+
-
10 60 60 90 mA
IH
Holding current
VD = 12 V; IGT = 0.1 A
-
6
30 30 60 mA
VT
On-state voltage
IT = 20 A
-
1.2
1.6
V
VGT
Gate trigger voltage
VD = 12 V; IT = 0.1 A
-
0.7
1.5
V
VD = 400 V; IT = 0.1 A;
0.25 0.4
-
V
Tj = 125 ˚C
ID
Off-state leakage current VD = VDRM(max);
-
0.1
0.5
mA
Tj = 125 ˚C
DYNAMIC CHARACTERISTICS
Tj = 25 ˚C unless otherwise stated
SYMBOL PARAMETER
CONDITIONS
MIN.
TYP. MAX. UNIT
BT139X- ... ...F ...G
dVD/dt
Critical rate of rise of
off-state voltage
VDM = 67% VDRM(max);
100 50 200 250
Tj = 125 ˚C; exponential
waveform; gate open
circuit
dVcom/dt Critical rate of change of VDM = 400 V; Tj = 95 ˚C;
-
commutating voltage
IT(RMS) = 16 A;
dIcom/dt = 7.2 A/ms; gate
open circuit
-
10 20
tgt
Gate controlled turn-on ITM = 20 A; VD = VDRM(max); -
-
-
2
time
IG = 0.1 A; dIG/dt = 5 A/µs
- V/µs
- V/µs
-
µs
2014-6-11
2
www.kersemi.com
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