MRF136Y 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF136Y

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Motorola => Freescale 

ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted.)

Characteristic

Symbol

OFF CHARACTERISTICS (1)

Drain–Source Breakdown Voltage

(VGS = 0, ID = 5.0 mA)

V(BR)DSS

Zero–Gate Voltage Drain Current

(VDS = 28 V, VGS = 0)

IDSS

Gate–Source Leakage Current

(VGS = 40 V, VDS = 0)

IGSS

ON CHARACTERISTICS (1)

Gate Threshold Voltage

(VDS = 10 V, ID = 25 mA)

VGS(th)

Forward Transconductance

gfs

(VDS = 10 V, ID = 250 mA)

DYNAMIC CHARACTERISTICS (1)

Input Capacitance

Ciss

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Output Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Coss

Reverse Transfer Capacitance

(VDS = 28 V, VGS = 0, f = 1.0 MHz)

Crss

FUNCTIONAL CHARACTERISTICS (2)

Noise Figure

MRF136

NF

(VDS = 28 Vdc, ID = 500 mA, f = 150 MHz)

Common Source Power Gain (Figure 1)

MRF136

Gps

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)

Common Source Power Gain (Figure 2)

MRF136Y

Gps

(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)

Drain Efficiency (Figure 1)

MRF136

η

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA)

Drain Efficiency (Figure 2)

MRF136Y

η

(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA)

Electrical Ruggedness (Figure 1)

MRF136

ψ

(VDD = 28 Vdc, Pout = 15 W, f = 150 MHz, IDQ = 25 mA,

VSWR 30:1 at all Phase Angles)

Electrical Ruggedness (Figure 2)

MRF136Y

ψ

(VDD = 28 Vdc, Pout = 30 W, f = 150 MHz, IDQ = 100 mA,

VSWR 30:1 at all Phase Angles)

NOTES:

1. For MRF136Y, each side measured separately.

2. For MRF136Y measured in push–pull configuration.

Min

Typ

Max

Unit

65

—

—

Vdc

—

—

2.0

mAdc

—

—

1.0

µAdc

1.0

3.0

6.0

Vdc

250

400

—

mmhos

—

24

—

pF

—

27

—

pF

—

5.5

—

pF

—

1.0

—

dB

13

16

—

dB

12

14

—

dB

50

60

—

%

50

54

—

%

No Degradation in Output Power

No Degradation in Output Power

MRF136 MRF136Y

2

MOTOROLA RF DEVICE DATA

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