MRF136Y 데이터 시트보기 (PDF) - Motorola => Freescale

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MRF136Y

RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs

Motorola => Freescale 

400

200

Zin{ 150

f = 100 MHz

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

f

Zin{

MHz

OHMS

100 7.5 – j9.73

150 4.11 – j7.56

200 2.66 – j6.39

400 2.39 – j2.18

{27 Ω Shunt Resistor Gate–to–Ground

400

200

ZOL*

150

f = 100 MHz

VDD = 28 V, IDQ = 25 mA,

Pout = 15 W

f

ZOL*

MHz

OHMS

100 13.7 – j16.8

150 9.08 – j15.38

200 4.74 – j8.92

400 4.28 – j4.17

ZOL* = Conjugate of the

optimum load impedance into

which the device operates at

a given output power, voltage

and frequency.

Figure 21. Large–Signal Series Equivalent

Input Impedance, Zin†

MRF136

400

225

Figure 22. Large–Signal Series Equivalent

Output Impedance, ZOL*

MRF136

Zin & ZOL* are given

from drain–to–drain and

gate–to–gate respectively.

400

Zin

150

225

ZOL*

150

100

100

50

f = 30 MHz

50

f = 30 MHz

VDD = 28 V, IDQ = 100 mA,

Pout = 30 W

f

Zin{

MHz

Ohms

ZOL*

Ohms

30

59.3 – j24

40.1 – j8.52

50

48 – j33.5 37 – j11.9

100

20.5 – j34.2 29 – j16.5

150

4.77 – j25.4 20.6 – j19

225

3 – j9.5

13 – j16.7

400

2.34 – j3.31 10.2 – j14.3

Feedback loops: 560 ohms in series with 0.1 µF

Drain to gate, each side of push–pull FET

ZOL* = Conjugate of the optimum load imped-

ance into which the device operates at a given

output power, voltage and frequency.

MOTOROLA RF DEVICE DATA

Figure 23. Input and Outut Impedance

MRF136Y

MRF136 MRF136Y

7

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