MMBTH11 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MMBTH11 Datasheet PDF : 8 Pages
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MPSH11
MMBTH11
C
C
EB
TO-92
SOT-23
Mark: 3G
E
B
NPN RF Transistor
This device is designed for common-emitter low noise amplifier
and mixer applications with collector currents in the 100 µA to
10 mA range to 300 MHz, and low frequency drift common-
base VHF oscillator applications with high output levels for
driving FET mixers. Sourced from Process 47.
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
Symbol
Parameter
Value
VCEO
Collector-Emitter Voltage
VCBO
Collector-Base Voltage
VEBO
Emitter-Base Voltage
IC
Collector Current - Continuous
TJ, Tstg
Operating and Storage Junction Temperature Range
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
25
30
3.0
50
-55 to +150
NOTES:
1) These ratings are based on a maximum junction temperature of 150 degrees C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
Units
V
V
V
mA
°C
Thermal Characteristics TA = 25°C unless otherwise noted
Symbol
Characteristic
PD
Total Device Dissipation
Derate above 25°C
RθJC
Thermal Resistance, Junction to Case
RθJA
Thermal Resistance, Junction to Ambient
*Device mounted on FR-4 PCB 1.6" X 1.6" X 0.06."
Max
MPSH11
350
2.8
125
357
*MMBTH11
225
1.8
556
Units
mW
mW /°C
°C/W
°C/W
2002 Fairchild Semiconductor Corporation
MPSH11/MMBTH11, Rev. B
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