MMBTH11 데이터 시트보기 (PDF) - Fairchild Semiconductor

부품명

상세내역

제조사

MMBTH11

NPN RF Transistor

Fairchild Semiconductor 

Electrical Characteristics

Symbol

Parameter

TA = 25°C unless otherwise noted

Test Conditions

NPN RF Transistor

(continued)

Min Max Units

OFF CHARACTERISTICS

V(BR)CEO

V(BR)CBO

V(BR)EBO

ICBO

IEBO

Collector-Emitter Sustaining Voltage*

Collector-Base Breakdown Voltage

Emitter-Base Breakdown Voltage

Collector Cutoff Current

Emitter Cutoff Current

IC = 1.0 mA, IB = 0

IC = 100 µA, IE = 0

IE = 10 µA, IC = 0

VCB = 25 V, IE = 0

VEB = 2.0 V, IC = 0

25

V

30

V

3.0

V

100

nA

100

nA

ON CHARACTERISTICS

hFE

DC Current Gain

VCE(sat)

VBE(on)

Collector-Emitter Saturation Voltage

Base-Emitter On Voltage

IC = 4.0 mA, VCE = 10 V

IC = 4.0 mA, IB = 0.4 mA

IC = 4.0 mA, VCE = 10 V

60

0.5

V

0.95

V

SMALL SIGNAL CHARACTERISTICS

fT

Ccb

Crb

rb묬c

Current Gain - Bandwidth Product

IC = 4.0 mA, VCE = 10 V,

650

f = 100 MHz

MHz

Collector-Base Capacitance

VCB = 10 V, IE = 0, f = 1.0 MHz

0.7

pF

Common-Base Feedback Capacitance VCB = 10 V, IE = 0, f = 1.0 MHz

0.6

0.9

pF

Collector Base Time Constant

IC = 4.0 mA, VCB = 10 V,

f = 31.8 MHz

9.0

pS

*Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%

3

Typical Characteristics

DC Current Gain

vs Collector Current

300

V CE = 5V

250

200

125 °C

150

25

100

- 40 °C

50

0

0.01

0.1

1

10

100

I C- COLLECTOR CURRENT (mA)

Collector-Emitter Saturation

Voltage vs Collector Current

0.2

β = 10

0.15

125 °C

0.1

0.05

0.1

25

- 40 °C

1

10 20 30

I C - COLLECTOR CURRENT (mA)

MPSH11/MMBTH11, Rev. B

Share Link: