MMBTH11 데이터 시트보기 (PDF) - Fairchild Semiconductor
부품명
상세내역
제조사
MMBTH11 Datasheet PDF : 8 Pages
| |||
Typical Characteristics (continued)
Base-Emitter Saturation
Voltage vs Collector Current
1
0.8
- 40 °C
25
0.6
0.4
125 °C
β = 10
0.2
0.1
1
10 20 30
I C - COLLE CTOR CURRENT ( mA)
Collector Cut-Off Current
vs Ambient Temperature
10
VCB = 30V
1
0.1
25
50
75
100
125
150
TA - AMBIENT TE MPE RATURE (°C)
NPN RF Transistor
(continued)
Base-Emitter ON Voltage vs
Collector Current
1
- 40 °C
0.8
0.6
25
0.4
125 °C
V CE = 5.0V
0.2
0.0 1
0.1
1
10
100
I C - COLLECTOR CURRENT (mA)
Power Dissipation vs
Ambient Temperature
350
300
TO-92
250
200
SOT-23
150
100
50
0
0
25
50
75
100
125
150
TEMPERATURE (°C)
3
2.4
1.8
1.2
0.6
0
0.1
Capacitance vs
Reverse Bias Voltage
C ibo
f = 1.0 MHz
C CB
1
10
50
REVERSE BIAS VOLTAGE (V)
Contours of Constant Gain
Bandwidth Product (fT)
50
10
1000 MHz
900 MHz
800 MHz
700 MHz
600 MHz
1
500 MHz
T A = 25ºC
0.1
0.1
300 MHz
200 MHz
100 MHz
1
400 MHz
10
100
I C - COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev. B
Share Link: 