MMBTH11 데이터 시트보기 (PDF) - Fairchild Semiconductor
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MMBTH11 Datasheet PDF : 8 Pages
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Common Emitter Y Parameters (continued)
NPN RF Transistor
(continued)
Output Admittance vs
Collector Current
1000
b oe
g oe
100
10
V CE = 15V
f = 45 MHz
1
0
4
8
12
16
20
24
I C- COLLECTOR CURRENT (mA)
Output Admittance vs
Collector Current
5 V CE = 10V
f = 200 MHz
b oe
2
1
0.5
g oe
0.2
0.1
0
2
4
6
8
10
I C - COLLECTOR CURRENT (mA)
10000
Output Admittance vs
Collector Voltage
I C = 7.0 mA
f = 45 MHz
1000
b oe
g oe
100
10
0
4
8
12
16
20
24
VCE - COLLECTOR VOLTAGE (V)
Output Admittance
vs Frequency
10000
V CE = 15V
I C = 7.0 mA
b oe
1000
g oe
3
100
10
50
100
200
500
f - FREQUENCY (MHz)
1000
Power Gain and Noise Figure
vs Collector Current
35 V CC = 12V
30 f = 200 MHz
FIG. 2
25
20
PG
15
10
5
NF
0
0
2
4
6
8
10
I C- COLLECTOR CURRENT (mA)
Conversion Gain
vs Collector Current
28
26
24
22
f IF = 45 MHz
f O = 200 MHz
f LO = 245 MHz
20
V CE = 15V
FIG. 1
18
0
1
2
3
4
5
I C - COLLECTOR CURRENT (mA)
MPSH11/MMBTH11, Rev. B
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