2SD669 데이터 시트보기 (PDF) - Unisonic Technologies
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2SD669 Datasheet PDF : 4 Pages
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2SD669/A
NPN SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATING (Ta=25°C unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
2SD669
2SD669A
SYMBOL
VCBO
VCEO
RATINGS
180
120
160
UNIT
V
V
Emitter-Base Voltage
VEBO
5
V
Collector Current
IC
1.5
A
Collector Peak Current
lC(PEAK)
3
A
SOT-223
0.5
W
SOT-89
0.5
W
Collector Dissipation
TO-126/TO-126C
TO-92/TO-92NL
PD
1
W
0.6
W
TO-251
1
W
TO-252
2
W
Junction Temperature
TJ
150
°C
Storage Temperature
TSTG
-40 ~ +150
°C
Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Note: Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (Ta=25°C, unless otherwise specified)
PARAMETER
Collector to Base Breakdown Voltage
Collector to Emitter Breakdown 2SD669
Voltage
2SD669A
Emitter to Base Breakdown Voltage
Collector Cut-off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Voltage
Current Gain Bandwidth Product
Output Capacitance
Note: Pulse test.
SYMBOL TEST CONDITIONS
BVCBO IC=1mA, IE=0
BVCEO IC=10mA, RBE=∞
BVEBO
ICBO
hFE1
hFE2
VCE(SAT)
VBE
fT
Cob
IE=1mA, IC=0
VCB=160V, IE=0
VCE=5V, IC=150mA (Note)
VCE=5V, IC=500mA (Note)
IC=600mA, IB=50mA (Note)
VCE=5V, IC=150mA (Note)
VCE=5V, IC=150mA (Note)
VCB=10V, IE=0, f=1MHz
CLASSIFICATION OF hFE1
RANK
RANGE
B
60-120
C
100-200
MIN TYP MAX UNIT
180
V
120
V
160
5
V
10 μA
60
320
30
1
V
1.5 V
140
MHz
14
pF
D
160-320
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 4
QW-R204-005,H
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