BF470 데이터 시트보기 (PDF) - New Jersey Semiconductor
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BF470 Datasheet PDF : 3 Pages
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PNP high-voltage transistors
BF470; BF472
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (EC 134).
SYMBOL
PARAMETER
VCBO
collector-base voltage
BF470
BF472
VCEO
collector-emitter voltage
BF470
BF472
VEBO
Ic
ICM
IBM
Plot
Tstg
Tj
Tgmb
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
CONDITIONS
open emitter
open base
open collector
Tmb<114°C
MIN. MAX. UNIT
-
-250 V
-300 V
-
-250 V
-300 V
-
-5
V
-
-50 mA
-
-100 mA
-
-50 mA
-
1.8
W
-65 +150 °C
-
150 °c
-65 +150 °c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
Rth j-a
thermal resistance from junction to ambient
in free air; note 1
100
K/W
Rfh j-mb thermal resistance from junction to mounting base
r 20
K/W
Note
1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm; mounting pad for collector lead
minimum 10 x 10 mm.
CHARACTERISTICS
TJ = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
MIN.
ICBO
collector cut-off current
IE = 0; VCB = -200 V
-
IE = 0; VCB = -200 V; Tj = 1 50 °C
-
IEBO
HFE
VcEsat
Cre
fT
emitter cut-off current
DC current gain
collector-emitter saturation voltage
feedback capacitance
transition frequency
Ic = 0; VEB = -5 V
-
Ic = -25 mA; VCE = -20 V
50
lc = -30 mA; IB = -5 mA
-
lc = "c = 0; VCE = -30 V; f = 1 MHz
-
lc = -10 mA; VCE = -10 V; f = 100 MHz 60
MAX.
-10
-10
-50
-
-600
1.8
-
UNIT
nA
HA
nA
mV
PF
MHz
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