DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

NCV8705(2014) 데이터 시트보기 (PDF) - ON Semiconductor

부품명
상세내역
제조사
NCV8705 Datasheet PDF : 20 Pages
1 2 3 4 5 6 7 8 9 10 Next Last
NCV8705
Table 4. ELECTRICAL CHARACTERISTICS
−40°C TJ 125°C; VIN = VOUT(NOM) + 0.5 V or 2.5 V, whichever is greater; VEN = 0.9 V, IOUT = 10 mA, CIN = COUT = 1 mF unless
otherwise noted. Typical values are at TJ = +25°C. (Note 4)
Parameter
Test Conditions
Symbol Min Typ Max Unit
Operating Input Voltage
Output Voltage Range (Adjustable)
Undervoltage Lock−out
Output Voltage Accuracy
Reference Voltage
Reference Voltage Accuracy
Line Regulation
Load Regulation
Load Transient
Dropout Voltage (Note 5)
Output Current Limit
Quiescent Current
Ground Current
Shutdown Current
EN Pin Threshold Voltage
High Threshold
Low Threshold
EN Pin Input Current
ADJ Pin Current
Turn−On Time
Power Supply Rejection Ratio
VIN rising
VOUT + 0.5 V VIN 5.5 V, IOUT = 0 − 500 mA
IOUT = 10 mA
VOUT + 0.5 V VIN 4.5 V, IOUT = 10 mA
VOUT + 0.5 V VIN 5.5 V, IOUT = 10 mA
IOUT = 0 mA to 500 mA
IOUT = 1 mA to 500 mA or 500 mA to 1 mA in
1 ms, COUT = 1 mF
IOUT = 500 mA, VOUT(nom) = 2.8 V
VOUT = 90% VOUT(nom)
IOUT = 0 mA
IOUT = 500 mA
VEN 0.4 V, TJ = +25°C
VEN 0 V, VIN = 2.0 to 4.5 V, TJ = −40 to +85°C
VEN Voltage increasing
VEN Voltage decreasing
VEN = 5.5 V
VADJ = 0.8 V
COUT = 1.0 mF, from assertion EN pin to 98%
VOUT(nom)
VIN = 3.8 V, VOUT = 2.8 V
(Fixed), IOUT = 500 mA
f = 100 Hz
f = 1 kHz
f = 10 kHz
VIN
2.5
VOUT
0.8
UVLO
1.2
VOUT
−2
VREF
VREF
−2
RegLINE
RegLOAD
TranLOAD
VDO
ICL
510
IQ
IGND
IDIS
IDIS
VEN_HI
0.9
VEN_LO
IEN
tON
PSRR
1.6
0.8
550
750
12
±120
230
750
13
260
0.12
0.55
100
1
150
73
71
56
5.5
5.5−
VDO
1.9
+2
+2
V
V
V
%
V
%
mV/V
mV/mA
mV
350 mV
950 mA
25
mA
mA
mA
2
mA
V
0.4
500
nA
nA
ms
dB
Output Noise Voltage
VOUT = 2.5 V (Fixed), VIN = 3.5 V, IOUT = 500 mA
VN
f = 100 Hz to 100 kHz
12
mVrms
Thermal Shutdown Temperature Temperature increasing from TJ = +25°C
TSD
160
°C
Thermal Shutdown Hysteresis
Temperature falling from TSD
TSDH
20
°C
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Performance guaranteed over the indicated operating temperature range by design and/or characterization. Production tested at TJ = TA
= 25_C. Low duty cycle pulse techniques are used during testing to maintain the junction temperature as close to ambient as possible.
5. Characterized when VOUT falls 100 mV below the regulated voltage at VIN = VOUT(NOM) + 0.5 V.
www.onsemi.com
4

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]