SFH225FA(2014) 데이터 시트보기 (PDF) - OSRAM GmbH

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SFH225FA
(Rev.:2014)

Silicon PIN Photodiode with Daylight Blocking Filter

OSRAM GmbH 

Version 1.1

Parameter

Bezeichnung

Open-circuit voltage

Leerlaufspannung

(Ee = 0.5 mW/cm2, λ = 870 nm)

Short-circuit current

Kurzschlussstrom

(Ee = 0.5 mW/cm2, λ = 870 nm)

Rise and fall time

Anstiegs- und Abfallzeit

(VR = 5 V, RL = 50 Ω, λ = 850 nm, Ip = 800 μA)

Forward voltage

Durchlassspannung

(IF = 100 mA, E = 0)

Capacitance

Kapazität

(VR = 0 V, f = 1 MHz, E = 0)

Temperature coefficient of VO

Temperaturkoeffizient von VO

Temperature coefficient of ISC

Temperaturkoeffizient von ISC

(λ = 870 nm)

Noise equivalent power

Rauschäquivalente Strahlungsleistung

(VR = 10 V, λ = 870 nm)

Detection limit

Nachweisgrenze

(VR = 10 V, λ = 870 nm)

SFH 225 FA

Symbol

Symbol

VO

Values

Werte

330 (≥ 250)

Unit

Einheit

mV

ISC

17

µA

tr, tf

0.02

µs

VF

1.3

V

C0

48

pF

TCV

-2.6

mV / K

TCI

0.1

%/K

NEP

D*

0.039

5.6e12

pW /

Hz½

cm x

Hz½ / W

2014-01-13

3

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