BD808 데이터 시트보기 (PDF) - New Jersey Semiconductor
부품명
상세내역
제조사
BD808 Datasheet PDF : 2 Pages
| |||
Silicon PNP Power Transistor
BD808
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VcEO(SUS) Collector-Emitter Sustaining Voltage lc= -200mA ;IB=0
VcE(sat) Collector-Emitter Saturation Voltage |C=-4A;IB=-0.4A
Vee(on) Base-Emitter On Voltage
ICBO
Collector Cutoff Current
|c= -4A ; VCE= -2V
VCB= -70V; IE= 0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hpE-1
DC Current Gain
lc= -2A ; VCE= -2V
hFE-2
DC Current Gain
lc= -4A ; Vce= -2V
ft
Current-Gain—Bandwidth Product
lc= -1 .OA ; VCE= -1 0V; ftest= 1.0MHz
MIN MAX UNIT
-60
V
-1.1
V
-1.6
V
-1.0
mA
-2.0
mA
30
15
1.5
MHz
Share Link: 