AS7C1026 데이터 시트보기 (PDF) - Alliance Semiconductor
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AS7C1026 Datasheet PDF : 10 Pages
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Data retention characteristics (over the operating range)13
Parameter
Symbol
Test conditions
VCC for data retention
Data retention current
Chip deselect to data retention time
Operation recovery time
Input leakage current
VDR
ICCDR
tCDR
tR
|ILI|
VCC = 2.0V
CE ≥ VCC–0.2V
VIN ≥ VCC–0.2V or
VIN ≤ 0.2V
Data retention waveform
VCC
CE
VCC
tCDR
VIH
Data retention mode
VDR ≥ 2.0V
VDR
Min
2.0
–
0
tRC
–
VCC
tR
VIH
AS7C1026
AS7C31026
Max
Unit
–
V
1
ma
–
ns
–
ns
1
µA
AC test conditions
- Output load: see Figure B or Figure C, except as noted.
- Input pulse level: GND to 3.0V. See Figure A.
- Input rise and fall times: 2 ns. See Figure A.
- Input and output timing reference levels: 1.5V.
+5V
+3.0V
90%
90%
10%
GND
2 ns
10%
Figure A: Input pulse
DOUT
255W
480W
C(14)
GND
Figure B: 5V Output load
Thevenin Equivalent:
168W
DOUT
+1.728V (5V and 3.3V)
+3.3V
DOUT
255W
320W
C(14)
GND
Figure C: 3.3V Output load
Notes
1 During VCC power-up, a pull-up resistor to VCC on CE is required to meet ISB specification.
2 This parameter is sampled, but not 100% tested.
3 For test conditions, see AC Test Conditions, Figures A, B, and C.
4 These parameters are specified with CL = 5pF, as in Figures B or C. Transition is measured ± 500 mV from steady-state voltage.
5 This parameter is guaranteed, but not tested.
6 WE is High for read cycle.
7 CE and OE are Low for read cycle.
8 Address valid prior to or coincident with CE transition Low.
9 All read cycle timings are referenced from the last valid address to the first transitioning address.
10 CE or WE must be High during address transitions. Either CE or WE asserting high terminates a write cycle.
11 All write cycle timings are referenced from the last valid address to the first transitioning address.
12 Not applicable.
13 2V data retention applies to commercial temperature range operation only.
14 C=30pF, except all high Z and low Z parameters where C=5pF.
3/23/01; v.1.0
Alliance Semiconductor
P. 6 of 10
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