BF775W 데이터 시트보기 (PDF) - Infineon Technologies

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BF775W

NPN Silicon RF Transistor

Infineon Technologies 

Electrical Characteristics

Parameter

AC Characteristics

Transition frequency

IC = 10 mA, VCE = 8 V, f = 500 MHz

Collector-base capacitance

VCB = 10 V, f = 1 MHz

Collector emitter capacitance

VCE = 10 V, f = 1 MHz

Emitter-base capacitance

VEB = 0.5 V, f = 1 MHz

Noise figure

IC = 2 mA, VCE = 6 V, ZS = ZSopt,

f = 900 MHz

f = 1.8 GHz

Power gain, maximum availableF)

IC = 10 mA, VCE = 8 V, ZS = ZSopt,

ZL = ZLopt, f = 900 MHz

f = 1.8 GHz

Transducer gain

IC = 10 mA, VCE = 8 V, ZS = ZL = 50 ,

f = 900 MHz

f = 1.8 GHz

BF 775W

Symbol

Values

Unit

min. typ. max.

fT

3.5 5.5

- GHz

Ccb

-

0.4 0.6 pF

Cce

- 0.25 -

Ceb

-

0.5

-

F

dB

Gma

|S21e|2

-

1

-

-

1.6

-

-

17

-

- 11.5 -

- 13.5 -

-

8

-

1Gma = |S21/S12| (k-(k2-1)1/2)

3

Nov-30-2000

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