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IRFE130 데이터 시트보기 (PDF) - International Rectifier

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IRFE130 Datasheet PDF : 7 Pages
1 2 3 4 5 6 7
IRFE130
Electrical Characteristics @ Tj = 25°C (Unless Otherwise Specified)
Parameter
Min Typ Max Units
Test Conditions
BVDSS
Drain-to-Source Breakdown Voltage
100 — —
V
VGS = 0V, ID = 1.0mA
BVDSS/TJ Temperature Coefficient of Breakdown — 0.11 — V/°C Reference to 25°C, ID = 1.0mA
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
— — 0.18
— 0.207
VGS = 10V, ID =5.0A
VGS =10V, ID =8.0A
VGS(th)
Gate Threshold Voltage
2.0 — 4.0 V
VDS = VGS, ID =250µA
gfs
Forward Transconductance
3.0 — — S ( )
VDS > 15V, IDS =5.0A
IDSS
Zero Gate Voltage Drain Current
— — 25
— 250 µA
VDS=80V, VGS=0V
VDS =80V
VGS = 0V, TJ = 125°C
IGSS
IGSS
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
100
-100
nA
VGS =20V
VGS =-20V
Qg
Total Gate Charge
— — 29
VGS =10V, ID= 8.0A
Qgs
Gate-to-Source Charge
— — 6.5 nC
VDS =50V
Qgd
Gate-to-Drain (‘Miller’) Charge
— — 17
td(on)
tr
td(off)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
— — 30
75
40
ns
VDD =50V, ID =8.0A,
RG =7.5
tf
Fall Time
— — 45
LS + LD
Total Inductance
— 6.1 — nH Measured from the center of
drain pad to center of source
pad
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
— 660
— 260 — pF
— 51 —
VGS = 0V, VDS =25V
f = 1.0MHz
Source-Drain Diode Ratings and Characteristics
Parameter
Min Typ Max Units
IS
Continuous Source Current (Body Diode)
ISM Pulse Source Current (Body Diode)
— — 8.0 A
— — 32
Test Conditions
VSD
trr
QRR
ton
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
— — 1.5 V
— — 300 nS
— — 970 µc
Tj = 25°C, IS =8.0A, VGS = 0V
Tj = 25°C, IF =8.0A, di/dt 100A/µs
VDD 50V
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance
Parameter
RthJC
RthJ-PCB
Junction to Case
Junction to PC Board
Min Typ Max Units
5.0
19"
"°C/W
Test Conditions
Soldered to a copper clad PC board
For footnotes refer to the last page
2
www.irf.com

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