IRFE130 데이터 시트보기 (PDF) - International Rectifier

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IRFE130

REPETITIVE AVALANCHE AND dv/dt RATED HEXFET® TRANSISTORS SURFACE MOUNT (LCC-18)

International Rectifier 

IRFE130

1200

1000

800

600

400

VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

200

0

1

Crss

10

100

VDS , Drain-to-Source Voltage (V)

20 ID = 78..40AA

16

V

V

V

DS

DS

DS

=

=

=

80V

50V

20V

12

8

4

FOR TEST CIRCUIT

0

SEE FIGURE 13

0

6

12

18

24

30

QG , Total Gate Charge (nC)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

TJ= 25° C

10

TJ= 150° C

1

0.1

0.2

VGS = 0 V

0.8

1.4

2.0

2.6

VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

1000

OPERATION IN THIS AREA LIMITED

BY RDS(on)

100

10us

10

100us

1ms

1

10ms

TC

TJ

=

=

25 °C

150 °C

Single Pulse

0.1

1

10

100

VDS, Drain-to-Source Voltage (V)

1000

Fig 8. Maximum Safe Operating Area

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