SGP15N60 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGP15N60 Datasheet PDF : 6 Pages
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Common Emitter
V
GE
=
±
15V,
R
G
=
13Ω
T = 25℃ ━━
C
TC = 125℃ ------
1000
Eoff
Eoff
Eon
100
5
10
15
20
25
30
Collector Current, IC [A]
Fig 13. Switching Loss vs. Collector Current
15
Common Emitter
R
L
=
20Ω
T = 25℃
C
12
V = 100 V
CC
9
300 V
200 V
6
3
0
0
10
20
30
40
50
Gate Charge, Qg [ nC ]
Fig 14. Gate Charge Characteristics
100
IC MAX. (Pulsed)
I MAX. (Continuous)
C
10
DC Operation
50us
100us
1㎳
1 Single Nonrepetitive
Pulse T = 25℃
C
Curves must be derated
linearly with increase
in temperature
0.1
0.1
1
10
100
Collector-Emitter Voltage, V [V]
CE
Fig 15. SOA Characteristics
1000
100
10
Safe Operating Area
VGE = 20V, TC = 100℃
1
1
10
100
1000
Collector-Emitter Voltage, VCE [V]
Fig 16. Turn-Off SOA Characteristics
1
0.5
0.2
0.1 0.1
0.05
0.02
0.01
0.01
single pulse
1E-3
10-5
10-4
10-3
10-2
10-1
Rectangular Pulse Duration [sec]
Pdm
t1
t2
Duty factor D = t1 / t2
Peak Tj = Pdm × Zthjc + TC
100
101
©2000 Fairchild Semiconductor International
Fig 17. Transient Thermal Impedance of IGBT
SGP15N60RUF Rev. A
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