2SB1626 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1626 Datasheet PDF : 2 Pages
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Silicon PNP Darlington Power Transistor
2SB1626
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-Emitter Breakdown Voltage lc= -30mA; IB= 0
VcE(sat) Collector-Emitter Saturation Voltage lc= -5A; le= -5mA
VeE(sat) Base-Emitter Saturation Voltage
lc= -5A; IB= -5mA
ICBO
Collector Cutoff Current
VCB=-110V;IE=0
IEBO
Emitter Cutoff Current
VEB= -5V; lc= 0
hFE
DC Current Gain
lc= -5A; VCE= -4V
COB
Collector Output Capacitance
lE=0;VCB=-10V;f=1MHz
fi
Current-Gain—Bandwidth Product
Classifications
0
P
Y
IE=0.5A;VCE=-12V
5000-12000 6500-20000 15000-30000
MIN TYP. MAX UNIT
-110
V
-2.5
V
-3.0
V
*
-100 M A
-100 u A
5000
30000
110
PF
100
MHz
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