FMBL1G300US60 데이터 시트보기 (PDF) - Fairchild Semiconductor

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FMBL1G300US60

Molding Type Module

Fairchild Semiconductor 

30000

Eoff

10000

Eon

1000

Common Emitter

V = 300V, V = ± 15V

CC

GE

RG = 1.5Ω

TC = 25℃

TC = 125℃

100

30 60 90 120 150 180 210 240 270 300

Collector Current, IC [A]

Fig 13. Switching Loss vs. Collector Current

15

Common Emitter

R

L

=

1

Ω

T = 25℃

12

C

300 V

9

V = 100 V

6

CC

200 V

3

0

0

200 400 600 800 1000 1200 1400

Gate Charge, Qg [ nC ]

Fig 14. Gate Charge Characteristics

1000

I MAX. (Pulsed)

C

IC MAX. (Continuous)

100

DC Operation

50us

100us

1㎳

10

Single Nonrepetitive

Pulse TC = 25℃

Curves must be derated

linerarly with increase

in temperature

1

0.3

1

10

100

Collector-Emitter Voltage, VCE [V]

Fig 15. SOA Characteristics

1000

1000

100

10

Safe Operating Area

V = 20V, T = 100oC

GE

C

1

1

10

100

1000

Collector-Emitter Voltage, V [V]

CE

Fig 16. Turn-Off SOA Characteristics

2000

1000

100

10

Single Nonrepetitive

Pulse T ≤ 125℃

J

V = 15V

GE

R

G

=

1.5

Ω

1

0

100 200 300 400 500 600 700

Collector-Emitter Voltage, V [V]

CE

Fig 17. RBSOA Characteristics

©2001 Fairchild Semiconductor Corporation

0.5

0.1

0.01

1E-3

TC=25℃

IGBT :

1E-4

DIODE :

10-5

10-4

10-3

10-2

10-1

100

101

Rectangular Pulse Duration [sec]

Fig 18. Transient Thermal Impedance

FMBL1G300US60 Rev. A

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