Philips Semiconductors
860 MHz, 20 dB gain power doubler amplifier
Product specification
BGD804
Table 4 Bandwidth 40 to 650 MHz; VB = 24 V; Tcase = 35 °C; ZS = ZL = 75 Ω
SYMBOL
PARAMETER
CONDITIONS
Gp
power gain
f = 50 MHz
f = 650 MHz
SL
slope cable equivalent
f = 40 to 650 MHz
FL
flatness of frequency response f = 40 to 650 MHz
S11
input return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
S22
output return losses
f = 40 to 80 MHz
f = 80 to 160 MHz
f = 160 to 320 MHz
f = 320 to 650 MHz
S21
CTB
phase response
composite triple beat
f = 50 MHz
94 channels flat; Vo = 44 dBmV;
measured at 649.25 MHz
Xmod
cross modulation
94 channels flat; Vo = 44 dBmV;
measured at 55.25 MHz
CSO
composite second order distortion 94 channels flat; Vo = 44 dBmV;
measured at 650.5 MHz
d2
second order distortion
Vo
output voltage
F
noise figure
note 1
dim = −60 dB; note 2
see Table 1
Itot
total current consumption (DC) note 3
MIN.
19.5
20
0.2
−
20
18.5
17
15
20
18.5
17
15
−45
−
TYP.
20
20.7
−
−
28
23
20
20
28.5
28
24
19
−
−
MAX.
20.5
−
2
±0.35
−
−
−
−
−
−
−
−
+45
−60
UNIT
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
deg
dB
−
−
−62 dB
−
−
−58 dB
−
−
−69 dB
65
−
−
dBmV
−
−
−
dB
−
395 410 mA
Notes
1. fp = 55.25 MHz; Vp = 44 dBmV;
fq = 595.25 MHz; Vq = 44 dBmV;
measured at fp + fq = 650.5 MHz.
2. Measured according to DIN45004B;
fp = 640.25 MHz; Vp = Vo;
fq = 647.25 MHz; Vq = Vo −6 dB;
fr = 649.25 MHz; Vr = Vo −6 dB;
measured at fp + fq − fr = 638.25 MHz.
3. The module normally operates at VB = 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 01
6