2SB1402 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1402 Datasheet PDF : 2 Pages
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<^£.mi-(londu.doi LP
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Ona..
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1402
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
: V(BR)CEo= -120V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -1.5
f
-, j
'2
; \ • •i/^f —^^
~3 ^ h
Base
Collector
Emitter
TO~220Fa package
APPLICATIONS
• Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25°C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
-«--B—•• _».s-
^—
f,
'&*
'
V
>, 1
H
t
rF
1
.,'_
*" *L
VCEO Collector-Emitter Voltage
VEBO Emitter-Base Voltage
Ic
Collector Current-Continuous
lew
Collector Current-Peak
Collector Power Dissipation
@Ta=25°C
PC
Collector Power Dissipation
@TC=25°C
Tj - Junction Temperature
Tstg
Storage Temperature
-120
V
-7
V
-3
A
-6
A
2
W
25
150
°c
-55-150 °c
I
r j *^D
mm
DIM MIN MAX
A 16.S5 17.15
B 9,54 10.10
C 4.35 4,65
D 0.75 0.90
F 3,20 3.40
G 6.90 7.20'
H 5.15 5.45
J 0.45 0.75
K 13.35 13.65
L 1.10 1.30
N I 4.98 5.18
Q 4.35 5.15
R 2.55 3.25
s 2.70 2.90
U 1.75 2.05
V 1.30 1.50
NJ Semi-Contluctors reserves the right to change test conditions, parameter limits anil package dimensions without
notice. Information furnished b> NJ Semi-Conductors is believed to be both accurate and reliable ill the time ofuoinu
to press. I luwewr. N.I Semi-Coiuliiclors assumes no responsibility for an\s or omissions discovered iu its use.
Nl Senii-C'iMiduclors encmiraj;cs customers to \erify that datasheets are current before placing orders.
Quality Semi-Conductors
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