2SB1402 데이터 시트보기 (PDF) - New Jersey Semiconductor

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2SB1402

Silicon PNP Darlington Power Transistor

New Jersey Semiconductor 

Silicon PNP Darlington Power Transistor

ELECTRICAL CHARACTERISTICS

Tj=25°C unless otherwisespecified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-Emitter Breakdown Voltage lc= -25mA; RBE= °°

V(BR)CBO Collector-Base Breakdown Voltage .. lc= -0.1mA; IE=0

V(BR)EBO Emitter-Base Breakdown Voltage

IE= -5mA; lc= 0

Vce(sat)-1 Collector-Emitter Saturation Voltage lc=-1.5A;lB=-3mA

VcE(sat)-2 Collector-Emitter Saturation Voltage lc= -3A; IB= -30mA

VBE(sat)-1 Base-Emitter Saturation Voltage

lc=-1.5A;lB=-3mA

VBE(sat)-2 Base-Emitter Saturation Voltage

lc= -3A; IB= -30mA

ICBO

Collector Cutoff Current

VCB=-100V; IE=0

ICEO

Collector Cutoff Current

VCE=-100V;RBE= °°

hFE

DC Current Gain

lc=-1.5A;VGE=-3V

2SB1402

MIN TYP. MAX UNIT

-120

V

-120

V

-7

V

-1.5

V

-3.0

V

1

-2.0

V

-3.5

V

-10

uA

-10

uA

1000

20000

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