MBR10100 데이터 시트보기 (PDF) - Vishay Semiconductors

부품명

상세내역

제조사

MBR10100

High Voltage Trench MOS Barrier Schottky Rectifier

Vishay Semiconductors 

MBR10xxx-E3, MBRF10xxx-E3, MBRB10xxx-E3

www.vishay.com

Vishay General Semiconductor

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

Maximum instantaneous forward voltage

Maximum reverse current per at working peak

reverse voltage

IF = 10 A

IF = 10 A

IF = 20 A

TC = 25 °C

TC = 125 °C

TC = 125 °C

TJ = 25 °C

TJ = 125 °C

VF (1)

IR (2)

Notes

(1) Pulse test: 300 μs pulse width, 1 % duty cycle

(2) Pulse test: Pulse width  40 ms

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

MBR

MBRF

Typical thermal resistance

RJA

60

-

RJC

2.0

3.5

MAX.

0.80

0.65

0.75

100

6.0

MBRB

60

2.0

UNIT

V

µA

mA

UNIT

°C/W

ORDERING INFORMATION (Example)

PACKAGE

PREFERRED P/N

UNIT WEIGHT (g)

TO-220AC

MBR10100-E3/4W

1.845

ITO-220AC

MBRF10100-E3/4W

1.661

TO-263AB

MBRB10100-E3/4W

1.384

TO-263AB

MBRB10100-E3/8W

1.384

PACKAGE CODE

4W

4W

4W

8W

BASE QUANTITY

50/tube

50/tube

50/tube

800/reel

DELIVERY MODE

Tube

Tube

Tube

Tape and reel

RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)

10

Resistive or Inductive Load

8

6

4

2

0

0

50

100

150

Case Temperature (°C)

Fig. 1 - Forward Current Derating Curve

160

TJ = TJ max.

8.3 ms Single Half Sine-Wave

140

120

100

80

60

40

1

10

100

Number of Cycles at 60 Hz

Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current

Revision: 11-Jun-18

2

Document Number: 89034

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Share Link: