IRFM054 데이터 시트보기 (PDF) - Semelab - > TT Electronics plc
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IRFM054 Datasheet PDF : 2 Pages
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IRFM054
ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions
Min. Typ. Max. Unit
STATIC ELECTRICAL RATINGS
BVDSS Drain – Source Breakdown Voltage
∆BVDSS Temperature Coefficient of
∆TJ Breakdown Voltage
Static Drain – Source On–State
RDS(on) Resistance 2
VGS = 0
ID = 1mA
Reference to 25°C
ID = 1mA
VGS = 10V
ID = 35A
60
0.68
V
V/°C
0.027 Ω
VGS(th) Gate Threshold Voltage
VDS = VGS
ID = 250µA
2
gfs
Forward Transconductance 2
VDS ≥ 15V
IDS = 35A
20
4
V
S((ΩΩ)
IDSS Zero Gate Voltage Drain Current
VGS = 0
VDS = 0.8BVDSS
TJ = 125°C
25
µA
250
IGSS
IGSS
Forward Gate – Source Leakage
Reverse Gate – Source Leakage
VGS = 20V
VGS = –20V
100
nA
–100
DYNAMIC CHARACTERISTICS
Ciss
Coss
Crss
CDC
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Drain – Case Capacitance
VGS = 0
VDS = 25V
f = 1MHz
4600
2000
pF
340
12
Qg
Total Gate Charge
Qgs Gate – Source Charge
VGS = 10V
ID = 35A
80
180
20
45
nC
Qgd Gate – Drain (“Miller”) Charge
VDS = 0.5BVDSS
34
105
td(on)
tr
td(off)
tf
Turn– On Delay Time
Rise Time
Turn–Off Delay Time
Fall Time
VDD = 30V
ID = 35A
RG = 2.35Ω
33
180
ns
100
100
SOURCE – DRAIN DIODE CHARACTERISTICS
IS
Continuous Source Current
ISM
Pulse Source Current 1
VSD Diode Forward Voltage 2
trr
Reverse Recovery Time 2
Qrr
Reverse Recovery Charge 2
IS = 35A
TJ = 25°C
VGS = 0
IF = 35A
TJ = 25°C
di / dt ≤ 100A/µs VDD ≤ 50V
35*
A
220
2.5
V
280 ns
2.2
µC
ton
Forward Turn–On Time
Negligible
PACKAGE CHARACTERISTICS
LD
Internal Drain Inductance Measured from 6mm down drain lead to centre of die
8.7
nH
LS
Internal Source Inductance Measured from 6mm down source lead to source bond pad
8.7
Notes
1) Repetitive Rating – Pulse width limited by Maximum
Junction Temperature
2) Pulse Test: Pulse Width ≤ 300µs, δ ≤ 2%
* IS Current limited by pin diameter.
Semelab plc. Telephone (01455) 556565. Telex: 341927. Fax (01455) 552612.
Prelim. 11/94
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