2SA1067 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SA1067 Datasheet PDF : 2 Pages
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J.S.IIS.LI <3z.mi-L-onau.ctoi
C/
t/
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, Line.
Silicon PNP Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SA1067
DESCRIPTION
• Collector-Emitter Breakdown Voltage-
:V(BR)cEo=-120V(Min.)
• Good Linearity of hFE
• Wide Area of Safe Operation
APPLICATIONS
• Designed forAF amplifier, high power amplifier applications.
PIN 1. BASE
REMITTER
3. COLLECT OR (CASE)
TO-3 package
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base Voltage
-120
V
VCEO Collector-Emitter Voltage
-120
V
VEBO Emitter-Base Voltage
-5
V
Ic
Collector Current-Continuous
-10
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-15
A
100
W
150
'C
-65-150 °c
I
I
JPL
1i
imii
DIM MiH MAX
A
3900
6 2530 26.fi?
C
780 8.50
D 0.90 t 10
E
1.40 t 60
_Ji_
1092
H
54&
K
11.. ;0 13 50
L l_l£Z5 1705
K 19 -SO 1962
y
400 420
u 3000 3020
V
430 450
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions without
notice. Information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going
to press. However. NJ Semi-Conduetors assumes no responsibility for any errors or omissions discovered in itsuse.
NJ Semi-Conductors encourages customers to verify that datasheets are current before placing orders.
Quality Semi-Conductors
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