2SC4980 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SC4980 Datasheet PDF : 2 Pages
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J.E.IIE.U
\s
, Una..
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
Silicon NPN Power Transistors
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SC4980
DESCRIPTION
• Collector-Emitter Sustaining Voltage-
: VCEO(sus)= SOV(Min)
• Collector Current-|c= 5A(Max.)
• Low Collector Saturation Voltage
) = 0.3V(Max.)@ lc= 2.5A
APPLICATIONS
• Designed for use in drivers such as DC/DC converters
and actuators.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base Voltage
100
V
VCEO Collector-Emitter Voltage
80
V
VEBO
Emitter-Base Voltage
7
V
Ic
Collector Current-Continuous
5
A
I CM
Collector Current-Peak
10
A
IB
Base Current-Continuous
1.5
A
IBM
Base Current-Peak
Total Power Dissipation
PT
@ TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature Range
2
A
25
W
150
°C
-55-150
°c
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Rth j-c Thermal Resistance.Junction to Case
5
"C/W
i
123
PIN t.BASE
2.COLLECTOR
3.BWIITTER
ITO-22C package
•*C-»-
•» B •-
Q
T
t,
'H
i
- -L
-- D
*• R ^ - -
mm
DIM MIN MAX
A 16.70 17.00
B 9.BO 10.20
c 4.40 4.80
D 0.70 0.90
F 3.20 3.40
H 2.50 2.70
J 0.50 0.70
K 13.&0 14.20
L 1.10 1.30
N 4.98 5.18
Q 4.00 4.40
R 2.60 2.80
N.I Scnii-CoiKluclors reserves the right to change test conditions, parameter limits and paeknge dimensions without
noiiee. information furnished by N.I Semi-Conduetors is believed to be both aceurnte and reliable at the time ofgoin
lo press. I louever. N.I Semi-Conduetors assumes no responsihililv for iin> errors or omis.sion.s discovered in its use.
N.I Semi-C'(inductors encourages customers to verify that datasheets are amvm bel'ore plneiug orders.
Quality Semi-Conductors
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