SGP23N60UFD 데이터 시트보기 (PDF) - Fairchild Semiconductor
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SGP23N60UFD Datasheet PDF : 8 Pages
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1200
1000
800
Cies
Common Emitter
VGE = 0V, f = 1MHz
TC = 25℃
600
Coes
400
200
Cres
0
1
10
30
Collector - Emitter Voltage, VCE [V]
Fig 7. Capacitance Characteristics
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 12A
C
TC = 25℃
TC = 125℃
Toff
Tf
Toff
100
50
1
Tf
10
Gate Resistance, RG [Ω ]
100 200
Fig 9. Turn-Off Characteristics vs.
Gate Resistance
200
Common Emitter
VCC = 300V, VGE = ± 15V
RG = 23Ω
100 TC = 25℃
T = 125℃
C
Ton
Tr
10
4
8
12
16
20
24
Collector Current, I [A]
C
Fig 11. Turn-On Characteristics vs.
Collector Current
©2002 Fairchild Semiconductor Corporation
200
Common Emitter
V = 300V, V = ± 15V
CC
GE
I = 12A
C
100
T = 25℃
C
Ton
TC = 125℃
Tr
10
1
10
Gate Resistance, RG [Ω ]
100 200
Fig 8. Turn-On Characteristics vs.
Gate Resistance
1000
100
30
1
Eoff
Eon
Eon
Eoff
Common Emitter
VCC = 300V, VGE = ± 15V
IC = 12A
T = 25℃
C
T = 125℃
C
10
100 200
Gate Resistance, RG [Ω]
Fig 10. Switching Loss vs. Gate Resistance
1000
Common Emitter
V = 300V, V = ± 15V
CC
GE
R
G
=
23Ω
TC = 25℃
TC = 125℃
Toff
Tf
100
Tf
50
4
Toff
8
12
16
20
24
Collector Current, IC [A]
Fig 12. Turn-Off Characteristics vs.
Collector Current
SGP23N60UFD Rev. A1
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