ADG751ARM 데이터 시트보기 (PDF) - Analog Devices
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ADG751ARM Datasheet PDF : 10 Pages
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ADG751–SPECIFICATIONS (VDD = +5 V ؎ 10%, GND = 0 V, unless otherwise noted.)
Parameter
B Grade
–40؇C to
+25؇C +85؇C
A Grade
–40؇C to
+25؇C +85؇C
Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON)
28
35
On-Resistance Flatness (RFLAT(ON)) 3
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
Drain OFF Leakage ID (OFF)
Channel ON Leakage ID, IS (ON)
± 0.01
± 0.25
± 0.01
± 0.25
± 0.01
± 0.25
0 V to VDD
15
40
18
2
5
± 0.01
± 3.0
± 0.25
± 0.01
± 3.0
± 0.25
± 0.01
± 3.0
± 0.25
0 V to VDD
20
3
± 3.0
± 3.0
± 3.0
V
Ω typ
Ω max
Ω typ
Ω max
nA typ
nA max
nA typ
nA max
nA typ
nA max
VS = 0 V to VDD, IDS = 10 mA;
Test Circuit 1
VS = 0 V to 2.5 V, IDS = 10 mA
VDD = 4.5 V
VDD = +5.5 V
VD = 4.5 V/1 V, VS = 1 V/4.5 V;
Test Circuit 2
VD = 4.5 V/1 V, VS = 1 V/4.5 V;
Test Circuit 2
VD = VS = 1 V, or 4.5 V;
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS1
tON
tOFF
Charge Injection
0.001
2
9
3
1
Off Isolation
–75
–3 dB Bandwidth
CS (OFF)
CD (OFF)
CD, CS (ON)
POWER REQUIREMENTS
IDD
180
4
4
26
0.001
0.1
2.4
0.8
± 0.5
13
5
0.5
2.4
0.8
0.001
± 0.5
2
9
13
3
5
1
–65
300
4
4
15
0.001
0.1
0.5
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
ns typ
ns max
ns typ
ns max
pC typ
RL = 300 Ω, CL = 35 pF;
VS = 3 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS = 3 V, Test Circuit 4
VS = 1 V, RS = 0 Ω, CL = 1.0 nF;
Test Circuit 5
dB typ RL = 50 Ω, CL = 5 pF, f = 100 MHz;
Test Circuit 6
MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7
pF typ
pF typ
pF typ
VDD = +5.5 V
µA typ Digital Inputs = 0 V or +5.5 V
µA max
NOTES
1Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
–2–
REV. 0
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