ADG751ARM 데이터 시트보기 (PDF) - Analog Devices
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ADG751ARM Datasheet PDF : 10 Pages
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SPECIFICATIONS (VDD = +3 V ؎ 10%, GND = 0 V, unless otherwise noted.)
ADG751
Parameter
B Grade
–40؇C to
+25؇C +85؇C
A Grade
–40؇C to
+25؇C +85؇C
Units Test Conditions/Comments
ANALOG SWITCH
Analog Signal Range
On-Resistance (RON)
0 V to VDD
60
35
90
0 V to VDD
50
V
Ω typ
Ω max
VS = 0 V to VDD, IDS = –10 mA;
Test Circuit 1
LEAKAGE CURRENTS
Source OFF Leakage IS (OFF)
± 0.01
±0.25 ±3.0
Drain OFF Leakage ID (OFF)
± 0.01
±0.25 ±3.0
Channel ON Leakage ID, IS (ON) ± 0.01
±0.25 ±3.0
± 0.01
± 0.25
± 3.0
± 0.01
± 0.25
± 3.0
± 0.01
± 0.25
± 3.0
nA typ
nA max
nA typ
nA max
nA typ
nA max
VDD = +3.3 V
VD = 3 V/1 V, VS = 1 V/3 V;
Test Circuit 2
VD = 1 V/3 V, VS = 3 V/1 V;
Test Circuit 2
VD = VS = 1 V, or 3 V;
Test Circuit 3
DIGITAL INPUTS
Input High Voltage, VINH
Input Low Voltage, VINL
Input Current
IINL or IINH
CIN, Digital Input Capacitance
DYNAMIC CHARACTERISTICS1
tON
tOFF
Charge Injection
0.001
2
12
4
1
Off Isolation
–75
–3 dB Bandwidth
180
CS (OFF)
4
CD (OFF)
4
CD, CS (ON)
26
2.0
0.4
± 0.5
19
6
2.0
0.4
0.001
± 0.5
2
12
19
4
6
1
–65
280
4
4
15
V min
V max
µA typ
µA max
pF typ
VIN = VINL or VINH
ns typ
ns max
ns typ
ns max
pC typ
RL = 300 Ω, CL = 35 pF;
VS = 2 V, Test Circuit 4
RL = 300 Ω, CL = 35 pF;
VS = 2 V, Test Circuit 4
VS = 1 V, RS = 0 Ω, CL = 1.0 nF;
Test Circuit 5
dB typ RL = 50 Ω, CL = 5 pF, f = 100 MHz;
Test Circuit 6
MHz typ RL = 50 Ω, CL = 5 pF, Test Circuit 7
pF typ
pF typ
pF typ
POWER REQUIREMENTS
IDD
0.001
0.1
0.5
0.001
0.1
0.5
VDD = +3.3 V
µA typ Digital Inputs = 0 V or +3.3 V
µA max
NOTES
1Guaranteed by design, not subject to production test.
Specifications subject to change without notice.
REV. 0
–3–
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