CY7C197D 데이터 시트보기 (PDF) - Cypress Semiconductor
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CY7C197D Datasheet PDF : 8 Pages
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PRELIMINARY
Switching Characteristics Over the Operating Range[6]
Parameter
Description
tPWE
tSD
tHD
tLZWE
tHZWE
WE Pulse Width
Data Set-Up to Write End
Data Hold from Write End
WE HIGH to Low Z[8]
WE LOW to High Z[8,9]
7C197D-10
Min.
Max.
7
6
0
3
6
7C197D-12
Min.
Max.
8
8
0
3
7
Data Retention Characteristics Over the Operating Range
Parameter
VDR
ICCDR
tCDR[4]
tR[11]
Description
VCC for Data Retention
Data Retention Current
Non-L, Com’l / Ind’l
L-Version Only
Chip Deselect to Data Retention Time
Operation Recovery Time
Conditions
VCC = VDR = 2.0V,
CE > VCC – 0.3V,
VIN > VCC – 0.3V or
VIN < 0.3V
Data Retention Waveform
VCC
CE
4.5V
tCDR
DATA RETENTION MODE
VDR > 2V
CY7C197D
7C197D-15
Min.
Max. Unit
9
ns
9
ns
0
ns
3
ns
7
ns
Min. Max. Unit
2.0
V
3
mA
1.2
mA
0
ns
tRC
ns
4.5V
tR
Switching Waveforms
Read Cycle No. 1[12, 13]
tRC
Address
tAA
tOHA
Data Out
Previous Data Valid
Notes:
11. Full device operation requires linear VCC ramp from VDR to VCC(min.) > 50 µs or stable at VCC(min.) > 50 µs.
12. WE is HIGH for read cycle.
13. Device is continuously selected, CE = VIL.
Data Valid
Document #: 38-05458 Rev. *C
Page 4 of 8
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