BAV99LT1 데이터 시트보기 (PDF) - ON Semiconductor

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BAV99LT1

Dual Series Switching Diode

ON Semiconductor 

BAV99LT1

OFF CHARACTERISTICS (TA = 25°C unless otherwise noted) (Each Diode)

Characteristic

Reverse Breakdown Voltage,

(I(BR) = 100 mA)

Reverse Voltage Leakage Current,

(VR = 70 Vdc)

(VR = 25 Vdc, TJ = 150°C)

(VR = 70 Vdc, TJ = 150°C)

Diode Capacitance,

(VR = 0, f = 1.0 MHz)

Forward Voltage,

(IF = 1.0 mAdc)

(IF = 10 mAdc)

(IF = 50 mAdc)

(IF = 150 mAdc)

Reverse Recovery Time,

(IF = IR = 10 mAdc, iR(REC) = 1.0 mAdc) RL = 100 W

Forward Recovery Voltage,

(IF = 10 mA, tr = 20 ns)

Symbol

V(BR)

IR

CD

VF

trr

VFR

Min

Max

Unit

70

−

Vdc

−

2.5

mAdc

−

30

−

50

−

1.5

pF

−

715

mVdc

−

855

−

1000

−

1250

−

6.0

ns

−

1.75

V

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