BAV99RW 데이터 시트보기 (PDF) - Galaxy Semi-Conductor

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BAV99RW

Dual series switching diode

Galaxy Semi-Conductor 

Production specification

Dual series switching diode

BAV99RW

ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

Parameter

Symbol Test conditions

MIN MAX UNIT

Reverse breakdown voltage

Reverse voltage leakage current

Forward voltage

Diode capacitance

Reverse recovery time

Forward recovery voltage

V(BR)

IR

VF

CD

trr 然

VFR

I(BR)=100μA

VR=70V

IF=1mA

IF=10mA

IF=50mA

IF=150mA

VR=0V f=1MHz

IF=IR=10mA

RL=100Ω

IF=10mA,tr=20ns

70

V

2.5

μA

715

855

mV

1000

1250

1.5

pF

6.0

nS

1.75

V

TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified

F007

Rev.A

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