2SA1213 데이터 시트보기 (PDF) - Nanjing International Group Co

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2SA1213

SOT-89-3L Plastic-Encapsulate Transistors

Nanjing International Group Co 

DONGGUAN NANJING ELECTRONICS LTD.,

SOT-89-3L Plastic-Encapsulate Transistors

2SA1213 TRANSISTOR (PNP)

FEATURES

z Complementary to 2SC2873

z Small Flat Package

z Power Amplifier and Switching Applications

z Low Saturation Voltage

z High Speed Switching Time

SOT-89-3L

1. BASE

2. COLLECTOR

3. EMITTER

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol

VCBO

VCEO

VEBO

IC

PC

RθJA

Tj

Tstg

Parameter

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

Collector Current

Collector Power Dissipation

Thermal Resistance From Junction To Ambient

Junction Temperature

Storage Temperature

Value

-50

-50

-5

-2

500

250

150

-55~+150

Unit

V

V

V

A

mW

℃/W

℃

℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

Min Typ Max Unit

Collector-base breakdown voltage

V(BR)CBO IC= -0.1mA,IE=0

-50

V

Collector-emitter breakdown voltage

V(BR)CEO IC=-10mA,IB=0

-50

V

Emitter-base breakdown voltage

V(BR)EBO IE=-0.1mA,IC=0

-5

V

Collector cut-off current

ICBO

VCB=-50V,IE=0

-100

nA

Emitter cut-off current

IEBO

VEB=-5V,IC=0

-100

nA

DC current gain

hFE

VCE=-2V, IC=-500mA

70

240

VCE=-2V, IC=-2A

20

Collector-emitter saturation voltage

VCE(sat) IC=-1A,IB=-50mA

-0.5

V

Base-emitter saturation voltage

VBE(sat) IC=-1A,IB=-50mA

-1.2

V

Collector output capacitance

Cob

VCB=-10V,IE=0, f=1MHz

40

pF

Transition frequency

fT

VCE=-2V,IC= -0.5A

100

MHz

CLASSIFICATION OF hFE

RANK

RANGE

MARKING

O

70–140

NO

Y

120–240

NY

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