VN02H(011Y) 데이터 시트보기 (PDF) - STMicroelectronics
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VN02H(011Y) Datasheet PDF : 10 Pages
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VN02H
ELECTRICAL CHARACTERISTICS (continued)
PROTECTION AND DIAGNOSTICS
Symb ol
P a ram et er
Test Conditions
Min. Typ . Max. Un it
VSTAT (•) St atus Voltage Out put ISTAT = 1.6 mA
Low
0.4
V
VUSD
Under Voltage Shut
Down
2.5
5
V
VSCL (•) Status Clamp Voltage ISTAT = 10 mA
ISTAT = -10 mA
5.5
6
V
-0.7 -0.3
V
tSC
Switch-off T ime in
RLOAD < 10 mΩ
Short Circuit Condition Tc = 25 oC
at Start-Up
VCC = 13 V
1.5
5
ms
IOV
Over Current
RLOAD < 10 mΩ
VCC = 13 V
28
A
IAV
Average Current in
Short Circuit
IOL
Open Load Current
Level
RLOAD < 10 mΩ
Tc = 85 oC
9 < VCC < 32 V
VCC = 13 V
0.9
1.8
A
5
70
mA
IOUT Leakage Current
Off St ate
VOUT = 0 V
60
µA
TTSD
Thermal Shut-down
Temperature
140 160
oC
TR
Reset Temperature
125 145
oC
(*) The VIH is internally clamped at 6V about. It is possible to connect this pin to an higher voltage via an external resistor calculated to not
exceed 10 mA at the input pin.
(•) Status determination > 100 µs after the switching edge.
Note 1 : Above VCC = 36 V the output voltage is clamped to 36 V. Power dissipation increases and the device turns off if junction
temperature reaches thermal shutdown temperature.
FUNCTIONAL DESCRIPTION
The device has a diagnostic output which
indicates open circuit (no load) and over
temperature conditions. The output signals are
processed by internal logic.
To protect the device against short circuit and
over-current condition the thermal protection
turns the integrated Power MOS off at a minimum
junction temperature of 140 oC. When the
temperature returns to about 125 oC the switch is
automatically turned on again. To ensur the
protection in all VCC conditions and in all the
junction temperature range it is necessary to limit
the voltage drop across Drain and Source (pin 3
and 5) at 29 V. The device is able to withstand a
load dump according the test pulse 5 at level III of
the ISO TR/1 7631.
Above VCC = 36V the output voltage is clamped
to 36V. Power dissipation increases and the
device turns off if junction temperature reaches
thermal shutdown temperature.
PROTECTING THE DEVICE AGAINST
REVERSE BATTERY
The simplest way to protect the device against a
continuous reverse battery voltage (-26V) is to
insert a Schottky diode between pin 1 (GND) and
ground, as shown in the typical application circuit
(fig. 3).
The consequences of the voltage drop across
this diode are as follows:
- If the input is pulled to power GND, a negative
voltage of -VF is seen by the device. (VIL, VIH
thresholds and VSTAT are increased by VF with
respect to power GND).
- The undervoltage shutdown level is increased
by VF.
If there is no need for the control unit to handle
external analog signals referred to the power
GND, the best approach is to connect the
reference potential of the control unit to node [1]
(see application circuit infig. 4), which becomes
the common signal GND for the whole control
board.
In this way no shift of VIH, VIL and VSTAT takes
place and no negative voltage appears on the
INPUT pin; this solution allows the use of a
standard diode, with a breakdown voltage able to
handle any ISO normalized negative pulses that
occours in the automotive environment.
4/10
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