2SB1404 데이터 시트보기 (PDF) - New Jersey Semiconductor
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2SB1404 Datasheet PDF : 2 Pages
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c//
20 STERN AVE.
SPRINGFIELD, NEW JERSEY 07081
U.S.A.
, One.
Silicon PNP Darlington Power Transistor
TELEPHONE: (973) 376-2922
(212)227-6005
FAX: (973) 376-8960
2SB1404
DESCRIPTION
• Collector-Emitter Breakdown Voltage-..
:V(BR)cEo=-120V(Min)
• High DC Current Gain-
: hFE= 1000(Min)@ (VCE= -3V, lc= -1.5A
f
,3
-2
u—'—|W I
. JBase
Collector
Knitter
TO-ZZOFa package
APPLICATIONS
• Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25'C)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base Voltage
-120
V
VCEO
Collector-Emitter Voltage
-120
V
VHBO
Emitter-Base Voltage
-7
V
Ic
Collector Current-Continuous
-3
A
IGM
Collector Current-Peak
Collector Power Dissipation
@Ta=25"C
PC
Collector Power Dissipation
@TC=25'C
Tj
Junction Temperature
Tstg
Storage Temperature
-6
A
2
W
25
150
"C
-55-150 •c
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rf
f
, iy1
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j. A
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fp;-^L
H
t
K
-^v
1
r it^° -*-R-
mm
DIM WIN
A 16.85
B 9.54
C 4.35
D 0.75
F 3.20
G 6.90
B 5.15
J 0.45
K 13,35
L 1,10
N 4.93
Q 4.85
R 2,55
s 2.70
u 1.75
V 1.30
MAX
17.15
10.10
4.65
0.90
3.40
7.20
5.45
0,75
13,65
1.30
5.18
5.15
3.25
2.90
2.05
1.50
NJ Semi-Conductors reserves the right to change test conditions, parameter limits and package dimensions \vithout
luiiiee. Information flirnisheU by N.I Semi-Conductors is believed to he both accurate and reliable tit the time of going
in press. I low ever. N.I Semi-Coiuluctors assumes no responsibility lor an> errors or omissions discovered in its use."
NJ Semi-Conduclors eiicnura.<;es eiislomers In verily lhat datasheels are etinvnl beloiv placing orders,
5emi-Conductors
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