MTB52N06VL 데이터 시트보기 (PDF) - ON Semiconductor
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MTB52N06VL Datasheet PDF : 10 Pages
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MTB52N06VL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = .25 mAdc)
Temperature Coefficient (Positive)
(Cpk ≥ 2.0) (Note 3)
Zero Gate Voltage Drain Current
(VDS = 60 Vdc, VGS = 0 Vdc)
(VDS = 60 Vdc, VGS = 0 Vdc, TJ = 150°C)
Gate−Body Leakage Current (VGS = ± 15 Vdc, VDS = 0 Vdc)
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(VDS = VGS, ID = 250 μAdc)
Threshold Temperature Coefficient (Negative)
(Cpk ≥ 2.0) (Note 3)
Static Drain−to−Source On−Resistance
(VGS = 5 Vdc, ID = 26 Adc)
(Cpk ≥ 2.0) (Note 3)
Drain−to−Source On−Voltage
(VGS = 5 Vdc, ID = 52 Adc)
(VGS = 5 Vdc, ID = 26 Adc, TJ = 150°C)
Forward Transconductance (VDS = 6.3 Vdc, ID = 20 Adc)
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
(VDS = 25 Vdc, VGS = 0 Vdc,
f = 1.0 MHz)
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
(VDD = 30 Vdc, ID = 52 Adc,
VGS = 5 Vdc,
RG = 9.1 Ω)
Gate Charge
(See Figure 8)
(VDS = 48 Vdc, ID = 52 Adc,
VGS = 5 Vdc)
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(IS = 52 Adc, VGS = 0 Vdc)
(IS = 52 Adc, VGS = 0 Vdc,
TJ = 150 °C)
Reverse Recovery Time
Reverse Recovery Stored
Charge
(IS = 52 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/μs)
INTERNAL PACKAGE INDUCTANCE
Internal Drain Inductance
(Measured from contact screw on tab to center of die)
(Measured from the drain lead 0.25″ from package to center of die)
Internal Source Inductance
(Measured from the source lead 0.25″ from package to source bond pad)
1. Pulse Test: Pulse Width ≤ 300 μs, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperature.
3. Reflects typical values.
Max limit − Typ
Cpk =
3 x SIGMA
Symbol
V(BR)DSS
IDSS
IGSS
VGS(th)
RDS(on)
VDS(on)
gFS
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
QT
Q1
Q2
Q3
VSD
trr
ta
tb
QRR
LD
LS
Min
Typ
Max
Unit
60
−
−
65
−
Vdc
−
mV/°C
μAdc
−
−
10
−
−
100
−
−
100
nAdc
1.0
1.5
2.0
Vdc
−
4.5
−
mV/°C
Ohm
−
0.022 0.025
Vdc
−
−
1.6
−
−
1.4
17
30
−
Mhos
−
1900
2660
pF
−
550
770
−
170
340
−
15
30
ns
−
500
1000
−
100
200
−
200
400
−
62
90
nC
−
4.0
−
−
31
−
−
16
−
Vdc
−
1.03
1.5
−
0.9
−
−
104
−
ns
−
63
−
−
41
−
−
0.28
−
μC
nH
−
3.5
−
−
4.5
−
nH
−
7.5
−
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