BFN24 데이터 시트보기 (PDF) - Siemens AG

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BFN24

NPN Silicon High-Voltage Transistors

Siemens AG 

Electrical Characteristics

at TA = 25 ˚C, unless otherwise specified.

Parameter

DC characteristics

Collector-emitter breakdown voltage

IC = 1 mA

BFN 24

BFN 26

Collector-base breakdown voltage

IC = 100 µA

BFN 24

BFN 26

Emitter-base breakdown voltage

IE = 100 µA

Collector-base cutoff current

VCB = 200 V

VCB = 250 V

VCB = 200 V, TA = 150 ˚C

VCB = 250 V, TA = 150 ˚C

BFN 24

BFN 26

BFN 24

BFN 26

Emitter-base cutoff current

VEB = 3 V

DC current gain

IC = 1 mA, VCE = 10 V

IC = 10 mA, VCE = 10 V1)

IC = 30 mA, VCE = 10 V1)

BFN 24

BFN 26

Collector-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

BFN 24

BFN 26

Base-emitter saturation voltage1)

IC = 20 mA, IB = 2 mA

AC characteristics

Transition frequency

IC = 20 mA, VCE = 10 V, f = 20 MHz

Output capacitance

VCB = 30 V, f = 1 MHz

BFN 24

BFN 26

Symbol

Values

Unit

min. typ. max.

V(BR)CE0

250 –

300 –

V(BR)CB0

250 –

300 –

V(BR)EB0 5

–

ICB0

–

–

–

–

–

–

–

–

IEB0

–

–

hFE

25

–

40

–

40

–

30

–

VCEsat

–

–

–

–

VBEsat

–

–

V

–

–

–

–

–

100 nA

100 nA

20

µA

20

µA

100 nA

–

–

–

–

–

V

0.4

0.5

0.9

fT

–

Cobo

–

70 –

1.5 –

MHz

pF

1) Pulse test conditions: t ≤ 300 µs, D = 2 %.

Semiconductor Group

2

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