IXFK 48N55
IXFX 48N55
Symbol
g
fs
Ciss
Coss
C
rss
td(on)
tr
td(off)
t
f
Qg(on)
Qgs
Qgd
RthJC
R
thCK
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
V = 10 V; I = 0.5 • I
Note 1
30 40
S
DS
D
D25
8900
pF
VGS = 0 V, VDS = 25 V, f = 1 MHz
1000
pF
330
pF
42
ns
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
55
ns
RG = 1 W (External),
110
ns
45
ns
330
nC
VGS = 10 V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
60
nC
65
nC
0.22 K/W
0.15
K/W
Source-Drain Diode
Symbol
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
IS
VGS = 0 V
ISM
Repetitive;
pulse width limited by TJM
VSD
IF = IS, VGS = 0 V, Note 1
trr
QRM
IF = IS, -di/dt = 100 A/ms, VR = 100 V
IRM
48 A
192 A
1.3 V
250 ns
1.4
mC
8
A
Note: 1. Pulse test, t £ 300 ms, duty cycle d £ 2 %
PLUS247TM (IXFX) Outline
Dim. Millimeter
Min. Max.
A 4.83 5.21
A 2.29 2.54
1
A 1.91 2.16
2
b 1.14 1.40
b1 1.91 2.13
b2 2.92 3.12
C 0.61 0.80
D 20.80 21.34
E 15.75 16.13
e
5.45 BSC
L 19.81 20.32
L1 3.81 4.32
Q 5.59 6.20
R 4.32 4.83
Inches
Min. Max.
.190 .205
.090 .100
.075 .085
.045 .055
.075 .084
.115 .123
.024 .031
.819 .840
.620 .635
.215 BSC
.780 .800
.150 .170
.220 .244
.170 .190
TO-264 AA Outline
Dim. Millimeter
Min. Max.
A 4.82 5.13
A1 2.54 2.89
A2 2.00 2.10
b 1.12 1.42
b1 2.39 2.69
b2 2.90 3.09
c
0.53 0.83
D 25.91 26.16
E 19.81 19.96
e
5.46 BSC
J
0.00 0.25
K 0.00 0.25
L 20.32 20.83
L1 2.29 2.59
P 3.17 3.66
Q 6.07 6.27
Q1 8.38 8.69
R 3.81 4.32
R1 1.78 2.29
S 6.04 6.30
T 1.57 1.83
Inches
Min. Max.
.190
.100
.079
.202
.114
.083
.044
.094
.114
.056
.106
.122
.021 .033
1.020 1.030
.780 .786
.215 BSC
.000 .010
.000 .010
.800
.090
.820
.102
.125 .144
.239
.330
.247
.342
.150
.070
.170
.090
.238 .248
.062 .072
© 2000 IXYS All rights reserved
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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