2SD1250 데이터 시트보기 (PDF) - KEXIN Industrial

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2SD1250

NPN Transistors

KEXIN Industrial 

SMD Type

NPN Transistors

2SD1250

Transistors

■ Features

● High forward current transfer ratio hFE

which has satisfactory linearity

● Low collector to emitter saturation voltage VCE(sat)

● Complementary to 2SB928

TO-252

6.50+0.15

-0.15

5.30+0.2

-0.2

2.30 +0.1

-0.1

0.50 +0.8

-0.7

0.80+0.1

-0.1

0.127

m ax

Unit: mm

■ Absolute Maximum Ratings Ta = 25℃

Parameter

Collector - Base Voltage

Collector - Emitter Voltage

Emitter - Base Voltage

Collector Current - Continuous

Collector Current - Pulse

Collector Power Dissipation

Junction Temperature

Storage Temperature Range

Tc = 25℃

Ta = 25℃

Symbol

VCBO

VCEO

VEBO

IC

ICP

PC

TJ

Tstg

2.3

4 .60 +0.15

-0.15

0.60+ 0.1

- 0.1

Rating

Unit

200

150

V

6

2

A

3

30

W

1.3

150

℃

-55 to 150

1 Base

2 Collector

3 Emitter

■ Electrical Characteristics Ta = 25℃

Parameter

Collector- base breakdown voltage

Collector- emitter breakdown voltage

Emitter - base breakdown voltage

Collector-base cut-off current

Emitter cut-off current

Collector-emitter saturation voltage

Base - emitter saturation voltage

Base - emitte voltage

DC current gain

Transition frequency

Symbol

Test Conditions

VCBO Ic= 500 μA， IE= 0

VCEO Ic= 5 mA， IB= 0

VEBO IE= 500μA， IC= 0

ICBO VCB= 200 V , IE= 0

IEBO VEB= 5V , IC=0

VCE(sat) IC=500 mA, IB=50mA

VBE(sat) IC= 500 mA, IB= 50mA

VBE VCE= 10V, IC= 400mA

hFE(1) VCE= 10V, IC= 150mA

hFE(2) VCE= 10V, IC= 400mA

fT

VCE= 10V, IC= 500mA,f=1MHz

Min Typ Max Unit

200

150

V

6

50

uA

50

1

1.2 V

1

60

240

50

20

MHz

■ Classification of hfe(1)

Type

Range

2SD1250-Q

60-140

2SD1250-P

100-240

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