DTB114GK(RevA) 데이터 시트보기 (PDF) - ROHM Semiconductor
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DTB114GK Datasheet PDF : 3 Pages
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Transistors
DTB114GK
zElectrical characteristics (Ta=25°C)
Parameter
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Emitter-base resistance
Transition frequency
∗ Transition frequency of the device.
Symbol
BVCBO
BVCEO
BVEBO
ICBO
IEBO
VCE(sat)
hFE
R
fT
Min.
−50
−50
−5
−
−300
−
56
7
−
Typ.
−
−
−
−
−
−
−
10
200
Max.
−
−
−
−0.5
−580
−0.3
−
13
−
Unit
V
V
V
µA
µA
V
−
kΩ
MHz
Conditions
IC= −50µA
IC= −1mA
IE= −720µA
VCB= −50V
VEB= −4V
IC/IB= −50mA/−2.5mA
IC= −50mA , VCE= −5V
−
VCE= −10V , IE= 50mA , f= 100MHz ∗
zElectrical characteristics curves
1000
VCE=5V
500
200
100
50
20
10
5
Ta=25°C
Ta=100°C
Ta= −40°C
2
1
−500µ −1m −2m −5m −10m −20m −50m−100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.1 DC current transfer ratio
vs. Collector current
−1
IC/IB=20
−500m
−200m
−100m
−50m
−20m
−10m
−5m
Ta=100°C
Ta=25°C
Ta= −40°C
−2m
−1m
−500µ −1m −2m
−5m −10m −20m −50m−100m −200m −500m
COLLECTOR CURRENT : IC (A)
Fig.2 Collector-Emitter saturation voltage
vs. Collector current
Rev.A
2/2
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