LH28F800SGXX-L10 데이터 시트보기 (PDF) - Sharp Electronics
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LH28F800SGXX-L10 Datasheet PDF : 45 Pages
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LH28F800SG-L/SGH-L (FOR TSOP, CSP)
Table 2 Bus Operations
MODE
Read
Output Disable
Standby
Deep Power-Down
Read Identifier Codes
Write
NOTE RP#
1, 2, 3, 8 VIH or VHH
3 VIH or VHH
3 VIH or VHH
4
VIL
8 VIH or VHH
3, 6, 7, 8 VIH or VHH
CE#
VIL
VIL
VIH
X
VIL
VIL
OE#
VIL
VIH
X
X
VIL
VIH
WE# ADDRESS VPP DQ0-15 RY/BY#
VIH
X
X
DOUT
X
VIH
X
X High Z X
X
X
X High Z X
X
X
X
High Z VOH
VIH See Fig. 2 X (NOTE 5) VOH
VIL
X
X
DIN
X
NOTES :
1. Refer to Section 6.2.3 "DC CHARACTERISTICS".
When VPP ≤ VPPLK, memory contents can be read, but
not altered.
2. X can be VIL or VIH for control pins and addresses, and
VPPLK or VPPH1/2/3 for VPP. See Section 6.2.3 "DC
CHARACTERISTICS" for VPPLK and VPPH1/2/3 voltages.
3. RY/BY# is VOL when the WSM is executing internal
block erase, word write, or lock-bit configuration
algorithms. It is VOH during when the WSM is not busy,
in block erase suspend mode (with word write inactive),
word write suspend mode, or deep power-down mode.
4. RP# at GND±0.2 V ensures the lowest deep power-
down current.
5. See Section 4.2 for read identifier code data.
6. VIH < RP# < VHH produce spurious results and should
not be attempted.
7. Refer to Table 3 for valid DIN during a write operation.
8. Don’t use the timing both OE# and WE# are VIL.
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