LH28F800SGXX-L10 데이터 시트보기 (PDF) - Sharp Electronics

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LH28F800SGXX-L10

8 M-bit (512 kB x 16) SmartVoltage Flash Memories

Sharp Electronics 

1 INTRODUCTION

This datasheet contains LH28F800SG-L/SGH-L

specifications. Section 1 provides a flash memory

overview. Sections 2, 3, 4, and 5 describe the

memory organization and functionality. Section 6

covers electrical specifications. LH28F800SG-L/

SGH-L flash memories documentation also includes

ordering information which is referenced in

Section 7.

1.1 New Features

Key enhancements of LH28F800SG-L/SGH-L

SmartVoltage flash memories are :

• SmartVoltage Technology

• Enhanced Suspend Capabilities

• In-System Block Locking

• Permanent Lock Capability,

Note following important differences :

• VPPLK has been lowered to 1.5 V to support

3.3 V and 5 V block erase, word write, and lock-

bit configuration operations. Designs that switch

VPP off during read operations should make sure

that the VPP voltage transitions to GND.

• To take advantage of SmartVoltage technology,

allow VCC connection to 2.7 V, 3.3 V or 5 V.

• Once set the permanent lock bit, the blocks

which have been set block lock-bit can not be

erased, written forever.

1.2 Product Overview

The LH28F800SG-L/SGH-L are high-performance

8 M-bit SmartVoltage flash memories organized as

512 k-word of 16 bits. The 512 k-word of data is

arranged in sixteen 32 k-word blocks which are

individually erasable, lockable, and unlockable in-

system. The memory map is shown in Fig. 1.

SmartVoltage technology provides a choice of VCC

and VPP combinations, as shown in Table 1, to

meet system performance and power expectations.

2.7 to 3.6 V VCC consumes approximately one-fifth

LH28F800SG-L/SGH-L (FOR TSOP, CSP)

the power of 5 V VCC. But, 5 V VCC provides the

highest read performance. VPP at 2.7 V, 3.3 V and

5 V eliminates the need for a separate 12 V

converter, while VPP = 12 V maximizes block erase

and word write performance. In addition to flexible

erase and program voltages, the dedicated VPP pin

gives complete data protection when VPP ≤ VPPLK.

Table 1 VCC and VPP Voltage Combinations

Offered by SmartVoltage Technology

VCC VOLTAGE

2.7 V

3.3 V

5V

VPP VOLTAGE

2.7 V, 3.3 V, 5 V, 12 V

3.3 V, 5 V, 12 V

5 V, 12 V

Internal VCC and VPP detection circuitry auto-

matically configures the device for optimized read

and write operations.

A command User Interface (CUI) serves as the

interface between the system processor and

internal operation of the device. A valid command

sequence written to the CUI initiates device

automation. An internal Write State Machine (WSM)

automatically executes the algorithms and timing

necessary for block erase, word write, and lock-bit

configuration operations.

A block erase operation erases one of the device’s

32 k-word blocks typically within 1.2 second (5 V

VCC, 12 V VPP) independent of other blocks. Each

block can be independently erased 100 000 times

(1.6 million block erases per device). Block erase

suspend mode allows system software to suspend

block erase to read data from, or write data to any

other block.

Writing memory data is performed in word

increments typically within 7.5 µs (5 V VCC, 12 V

VPP). Word write suspend mode enables the

system to read data from, or write data to any other

flash memory array location.

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