SIHF9Z24L(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHF9Z24L Datasheet PDF : 8 Pages
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IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L
Vishay Siliconix
ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
Maximum Power Dissipation
Peak Diode Recovery dV/dtc, e
TA = 25 °C
TC = 25 °C
PD
dV/dt
Operating Junction and Storage Temperature Range
Soldering Recommendations (Peak Temperature)
for 10 s
TJ, Tstg
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. VDD = - 25 V, starting TJ = 25 °C, L = 2.3 mH, RG = 25 Ω, IAS = - 11 A (see fig. 12).
c. ISD ≤ - 11 A, dI/dt ≤ 140 A/µs, VDD ≤ VDS, TJ ≤ 175 °C.
d. 1.6 mm from case.
e. Uses IRF9Z24/SiHF9Z24 data and test conditions.
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
LIMIT
3.7
60
- 4.5
- 55 to + 175
300d
UNIT
W
W
V/ns
°C
MAX.
40
2.5
UNIT
°C/W
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
ΔVDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 µA
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 µA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 6.6 Ab
VDS = - 25 V, ID = - 6.6 Ac
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
VDS = - 25 V,
f = 1.0 MHz, see fig. 5c
VGS = - 10 V
ID = - 11 A, VDS = - 480 V,
see fig. 6 and 13b, c
VDD = - 30 V, ID = - 11 A,
RG = 18 Ω, RD = 2.5 Ω, see fig. 10b
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
Pulsed Diode Forward Currenta
integral reverse
ISM
p - n junction diode
D
G
S
Body Diode Voltage
VSD
TJ = 25 °C, IS = - 11 A, VGS = 0 Vb
MIN.
- 60
-
- 2.0
-
-
-
-
1.4
-
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
- 0.056
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.28
-
V
V/°C
V
nA
µA
Ω
S
570
-
360
-
pF
65
-
-
19
-
5.4
nC
-
11
13
-
68
-
ns
15
-
29
-
-
- 11
A
-
- 44
-
- 6.3
V
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Document Number: 91091
S-Pending-Rev. A, 03-Jun-08
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