SIHF9Z24L(2008) 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHF9Z24L
(Rev.:2008)

Power MOSFET

Vishay Semiconductors 

IRF9Z24S, IRF9Z24L, SiHF9Z24S, SiHF9Z24L

Vishay Siliconix

SPECIFICATIONS TJ = 25 °C, unless otherwise noted

PARAMETER

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Drain-Source Body Diode Characteristics

Body Diode Reverse Recovery Time

Body Diode Reverse Recovery Charge

Forward Turn-On Time

trr

Qrr

-

TJ = 25 °C, IF = -11 A, dI/dt = 100 A/µsb, c

-

100

200

ns

320 640 nC

ton

Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %.

c. Uses IRF9Z24/SiHF9Z24 data and test conditions.

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Fig. 1 - Typical Output Characteristics

Fig. 3 - Typical Transfer Characteristics

Fig. 2 - Typical Output Characteristics

Document Number: 91091

S-Pending-Rev. A, 03-Jun-08

Fig. 4 - Normalized On-Resistance vs. Temperature

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