SIHF9Z24STRR-GE3 데이터 시트보기 (PDF) - Vishay Semiconductors
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SIHF9Z24STRR-GE3 Datasheet PDF : 8 Pages
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IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
Maximum Junction-to-Case (Drain)
RthJC
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
MIN.
-
-
TYP.
-
-
MAX.
40
2.5
UNIT
°C/W
SPECIFICATIONS (TJ = 25 °C, unless otherwise noted)
PARAMETER
SYMBOL
TEST CONDITIONS
MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage
VDS Temperature Coefficient
Gate-Source Threshold Voltage
Gate-Source Leakage
Zero Gate Voltage Drain Current
Drain-Source On-State Resistance
Forward Transconductance
Dynamic
VDS
VDS/TJ
VGS(th)
IGSS
IDSS
RDS(on)
gfs
VGS = 0 V, ID = - 250 μA
Reference to 25 °C, ID = - 1 mAc
VDS = VGS, ID = - 250 μA
VGS = ± 20 V
VDS = - 60 V, VGS = 0 V
VDS = - 48 V, VGS = 0 V, TJ = 150 °C
VGS = - 10 V
ID = - 6.6 Ab
VDS = - 25 V, ID = - 6.6 Ac
- 60
-
- 2.0
-
-
-
-
1.4
-
- 0.056
-
-
-
-
-
-
-
-
- 4.0
± 100
- 100
- 500
0.28
-
V
V/°C
V
nA
μA
S
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Drain-Source Body Diode Characteristics
Ciss
Coss
Crss
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
VGS = 0 V,
-
VDS = - 25 V,
-
f = 1.0 MHz, see fig. 5c
-
-
VGS = - 10 V
ID = - 11 A, VDS = - 48 V,
see fig. 6 and 13b, c
-
-
-
VDD = - 30 V, ID = - 11 A,
-
Rg = 18 , RD = 2.5 , see fig. 10b
-
-
570
-
360
-
pF
65
-
-
19
-
5.4
nC
-
11
13
-
68
-
ns
15
-
29
-
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
Pulsed Diode Forward Currenta
ISM
p - n junction diode
D
G
S
-
-
- 11
A
-
-
- 44
Body Diode Voltage
VSD
Drain-Source Body Diode Characteristics
TJ = 25 °C, IS = - 11 A, VGS = 0 Vb
-
-
- 6.3
V
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge
Forward Turn-On Time
trr
Qrr
-
TJ = 25 °C, IF = -11 A, dI/dt = 100 A/μsb, c
-
100
200
ns
320 640 nC
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width 300 μs; duty cycle 2 %.
c. Uses IRF9Z24, SiHF9Z24 data and test conditions.
www.vishay.com
2
Document Number: 91091
S10-1728-Rev. B, 02-Aug-10
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