SIHF9Z24STR-E3 데이터 시트보기 (PDF) - Vishay Semiconductors

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SIHF9Z24STR-E3

Power MOSFET

Vishay Semiconductors 

IRF9Z24S, SiHF9Z24S, IRF9Z24L, SiHF9Z24L

Vishay Siliconix

1250

1000

750

500

VGS = 0 V, f = 1 MHz

Ciss = Cgs + Cgd, Cds Shorted

Crss = Cgd

Coss = Cds + Cgd

Ciss

Coss

250

0

100

91091_05

Crss

101

- VDS, Drain-to-Source Voltage (V)

Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage

101

175 °C

25 °C

100

10-1

0.5

91091_07

VGS = 0 V

1.5

2.5

3.5

4.5

5.5

- VSD, Source-to-Drain Voltage (V)

Fig. 7 - Typical Source-Drain Diode Forward Voltage

20 ID = - 11 A

16

VDS = - 48 V

VDS = - 30 V

12

8

4

0

0

91091_06

For test circuit

see figure 13

5

10

15

20

25

QG, Total Gate Charge (nC)

Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage

102

Operation in this area limited by RDS(on)

5

10 µs

2

100 µs

10

1 ms

5

2

10 ms

1

5

2

0.1

0.1 2

51

TC = 25 °C

TJ = 175 °C

Single Pulse

2

5 10 2

5 102 2

5 103

91091_08

- VDS, Drain-to-Source Voltage (V)

Fig. 8 - Maximum Safe Operating Area

www.vishay.com

4

Document Number: 91091

S10-1728-Rev. B, 02-Aug-10

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